Answer / arpan

increasing vdd increeases power dissipation as

switching power = c vdd**2 f

also at submicron level , increasing vdd amy lead to hgh
feild in the device....leading to its failure

Answer / narasimha reddy d l

power supply is directly praportional to the sub-micron
leakage current so if Vdd increases the leakage current
will increases

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