Answer / nikki

This is a phenomena associated with the gate thickness of a
transistor. When the thickness of oxide is very small there
exists a possibilty that electrons pass directly between
source and gate. This is a seond order effect and limits
the scaling down of transistor size.

Answer / bob

FN Tunneling is only a second order effect, unless you are
desiging Flash memory. In which case, the FN tunneling is
the first order mechanism for programming and erasing the
memory cell.

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