What is the difference between nmos and pmos technologies?
Draw the stick diagram of a NOR gate. Optimize it
How about voltage source?
Draw the Cross Section of an Inverter? Clearly show all the connections between M1 and poly, M1 and diffusion layers etc?
Explain various adders and difference between them?
What was your role in the silicon evaluation or product ramp? What tools did you use?
Let A & B be two inputs of the NAND gate. Say signal A arrives at the NAND gate later than signal B. To optimize delay, of the two series NMOS inputs A & B, which one would you place near the output?
How binary number can give a signal or convert into a digital signal?
Approximately, what were the sizes of your transistors in the SRAM cell? How did you arrive at those sizes?
If the current through the poly is 20nA and the contact can take a max current of 10nA how would u overcome the problem?
Need to convert this VHDL code into VLSI verilog code? LIBRARY IEEE; USE IEEE.STD_LOGIC_1164.ALL; ----using all functions of specific package--- ENTITY tollbooth2 IS PORT (Clock,car_s,RE : IN STD_LOGIC; coin_s : IN STD_LOGIC_VECTOR(1 DOWNTO 0); r_light,g_light,alarm : OUT STD_LOGIC); END tollbooth2; ARCHITECTURE Behav OF tollbooth2 IS TYPE state_type IS (NO_CAR,GOTZERO,GOTFIV,GOTTEN,GOTFIF,GOTTWEN,CAR_PAID,CHEATE D); ------GOTZERO = PAID $0.00--------- ------GOTFIV = PAID $0.05---------- ------GOTTEN = PAID $0.10---------- ------GOTFIF = PAID $0.15---------- ------GOTTWEN = PAID $0.20--------- SIGNAL present_state,next_state : state_type; BEGIN -----Next state is identified using present state,car & coin sensors------ PROCESS(present_state,car_s,coin_s) BEGIN CASE present_state IS WHEN NO_CAR => IF (car_s = '1') THEN next_state <= GOTZERO; ELSE next_state <= NO_CAR; END IF; WHEN GOTZERO => IF (car_s ='0') THEN next_state <= CHEATED; ELSIF (coin_s = "00") THEN next_state <= GOTZERO; ELSIF (coin_s = "01") THEN next_state <= GOTFIV; ELSIF (coin_s ="10") THEN next_state <= GOTTEN; END IF; WHEN GOTFIV=> IF (car_s ='0') THEN next_state <= CHEATED; ELSIF (coin_s = "00") THEN next_state <= GOTFIV; ELSIF (coin_s = "01") THEN next_state <= GOTTEN; ELSIF (coin_s <= "10") THEN next_state <= GOTFIV; END IF; WHEN GOTTEN => IF (car_s ='0') THEN next_state <= CHEATED; ELSIF (coin_s ="00") THEN next_state <= GOTTEN; ELSIF (coin_s="01") THEN next_state <= GOTFIV; ELSIF (coin_s="10") THEN next_state <= GOTTWEN; END IF; WHEN GOTFIF => IF (car_s ='0') THEN next_state <= CHEATED; ELSIF (coin_s = "00") THEN next_state <= GOTFIF; ELSIF (coin_s ="01") THEN next_state <= GOTTWEN; ELSIF (coin_s = "10") THEN next_state <= GOTTWEN; END IF; WHEN GOTTWEN => next_state <= CAR_PAID; WHEN CAR_PAID => IF (car_s = '0') THEN next_state <= NO_CAR; ELSE next_state<= CAR_PAID; END IF; WHEN CHEATED => IF (car_s = '1') THEN next_state <= GOTZERO; ELSE next_state <= CHEATED; END IF; END CASE; END PROCESS;-----End of Process 1 -------PROCESS 2 for STATE REGISTER CLOCKING-------- PROCESS(Clock,RE) BEGIN IF RE = '1' THEN present_state <= GOTZERO; ----When the clock changes from low to high,the state of the system ----stored in next_state becomes the present state----- ELSIF Clock'EVENT AND Clock ='1' THEN present_state <= next_state; END IF; END PROCESS;-----End of Process 2------- --------------------------------------------------------- -----Conditional signal assignment statements---------- r_light <= '0' WHEN present_state = CAR_PAID ELSE '1'; g_light <= '1' WHEN present_state = CAR_PAID ELSE '0'; alarm <= '1' WHEN present_state = CHEATED ELSE '0'; END Behav;
What are the different ways in which antenna violation can be prevented?
Tell me how MOSFET works.
Draw Vds-Ids curve for a MOSFET. Now, show how this curve changes with increasing transistor width.
In the design of a large inverter, why do we prefer to connect small transistors in parallel (thus increasing effective width) rather than lay out one transistor with large width?