What is the difference between nmos and pmos technologies?
No Answer is Posted For this Question
Be the First to Post Answer
Explain the operation of a 6T-SRAM cell?
What is Charge Sharing? Explain the Charge Sharing problem while sampling data from a Bus
What is the difference between = and == in C?
What is SPICE?
Explain various adders and diff between them?
What work have you done on full chip Clock and Power distribution? What process technology and budgets were used?
What are the different classification of the timing control?
What is the difference between cmos and bipolar technologies?
What are the ways to Optimize the Performance of a Difference Amplifier?
Need to convert this VHDL code into VLSI verilog code? LIBRARY IEEE; USE IEEE.STD_LOGIC_1164.ALL; ----using all functions of specific package--- ENTITY tollbooth2 IS PORT (Clock,car_s,RE : IN STD_LOGIC; coin_s : IN STD_LOGIC_VECTOR(1 DOWNTO 0); r_light,g_light,alarm : OUT STD_LOGIC); END tollbooth2; ARCHITECTURE Behav OF tollbooth2 IS TYPE state_type IS (NO_CAR,GOTZERO,GOTFIV,GOTTEN,GOTFIF,GOTTWEN,CAR_PAID,CHEATE D); ------GOTZERO = PAID $0.00--------- ------GOTFIV = PAID $0.05---------- ------GOTTEN = PAID $0.10---------- ------GOTFIF = PAID $0.15---------- ------GOTTWEN = PAID $0.20--------- SIGNAL present_state,next_state : state_type; BEGIN -----Next state is identified using present state,car & coin sensors------ PROCESS(present_state,car_s,coin_s) BEGIN CASE present_state IS WHEN NO_CAR => IF (car_s = '1') THEN next_state <= GOTZERO; ELSE next_state <= NO_CAR; END IF; WHEN GOTZERO => IF (car_s ='0') THEN next_state <= CHEATED; ELSIF (coin_s = "00") THEN next_state <= GOTZERO; ELSIF (coin_s = "01") THEN next_state <= GOTFIV; ELSIF (coin_s ="10") THEN next_state <= GOTTEN; END IF; WHEN GOTFIV=> IF (car_s ='0') THEN next_state <= CHEATED; ELSIF (coin_s = "00") THEN next_state <= GOTFIV; ELSIF (coin_s = "01") THEN next_state <= GOTTEN; ELSIF (coin_s <= "10") THEN next_state <= GOTFIV; END IF; WHEN GOTTEN => IF (car_s ='0') THEN next_state <= CHEATED; ELSIF (coin_s ="00") THEN next_state <= GOTTEN; ELSIF (coin_s="01") THEN next_state <= GOTFIV; ELSIF (coin_s="10") THEN next_state <= GOTTWEN; END IF; WHEN GOTFIF => IF (car_s ='0') THEN next_state <= CHEATED; ELSIF (coin_s = "00") THEN next_state <= GOTFIF; ELSIF (coin_s ="01") THEN next_state <= GOTTWEN; ELSIF (coin_s = "10") THEN next_state <= GOTTWEN; END IF; WHEN GOTTWEN => next_state <= CAR_PAID; WHEN CAR_PAID => IF (car_s = '0') THEN next_state <= NO_CAR; ELSE next_state<= CAR_PAID; END IF; WHEN CHEATED => IF (car_s = '1') THEN next_state <= GOTZERO; ELSE next_state <= CHEATED; END IF; END CASE; END PROCESS;-----End of Process 1 -------PROCESS 2 for STATE REGISTER CLOCKING-------- PROCESS(Clock,RE) BEGIN IF RE = '1' THEN present_state <= GOTZERO; ----When the clock changes from low to high,the state of the system ----stored in next_state becomes the present state----- ELSIF Clock'EVENT AND Clock ='1' THEN present_state <= next_state; END IF; END PROCESS;-----End of Process 2------- --------------------------------------------------------- -----Conditional signal assignment statements---------- r_light <= '0' WHEN present_state = CAR_PAID ELSE '1'; g_light <= '1' WHEN present_state = CAR_PAID ELSE '0'; alarm <= '1' WHEN present_state = CHEATED ELSE '0'; END Behav;
Let A & B be two inputs of the NAND gate. Say signal A arrives at the NAND gate later than signal B. To optimize delay, of the two series NMOS inputs A & B, which one would you place near the output?
Calculate rise delay of a 3-input NAND gate driving a 3-input NOR gate through a 6mm long and 0.45m wide metal wire with sheet resistance R = 0.065 / and Cpermicron= 0.25 fF/m. The resistance and capacitance of the unit NMOS are 6.5k and 2.5fF. Use a 3 segment -model for the wire. Consider PMOS and NMOS size of reference inverter as 2 and 1 respectively. Use appropriate sizing for the NAND and NOR gate.