Answer / priyadharsini

Insulated gate bipolar transister. it is a combination of
BJT and MOSFET.

BJT has low conduction loss and having longer switching
period.
MOSFET has high conduction loss and having lower switching
period.
therfore IGBT has low conduction loss and high switching
period.

it is used in SMPS, traction motor, Induction heating etc.

In SCR once the gate is triggered the gate is lossed its
control. ie if we remove the gate pulse after the SCR
starts conducting it will not stop.

but in IGBT we can control the Gate. by applying reverse
voltage.

i think this is the difference if any one find the above
answer is wrong please tell me the right one.

Answer / anand

the full form of igbt is insulated gate bipolar transistor.
it is constructed from the combining of both BJT and PMOSFET.
it has high input impedance and low on - state power loss .
it is free from second break down problem present in bjt...
it is also known as (MOSIGT), (COMFET)...

it is constructed virtualy in the same manner as a power
MOSFET.an IGBT has also thousand of basic structure cells
connected appropritely on a single chip of silicon.

it has a four substrate p,p+,n+,n-. respectively...
p+ substrate is called injection layer because it injects
holes into n- layer .n- layer is called drift region .
thickness of the n- layer determines the voltage blocking
capability of IGBT.
the p layer is called body of the IGBT.

WHERE IT IS USED : it is widely used in medium power
application such as DC and AC motors drives.
UPS SYSTEMS , RELAYS AND CONTACTORS.


In thyristor the gate is triggered the gate is losses its
control. ie if we remove the gate pulse after the thyristor
starts conducting it will not stop.

but in IGBT we can control the Gate. by applying reverse
voltage applied across it .

Answer / v n panchalai

Apart from the above mentioned i add to that

The Thyristors can not be switched beyond 1kHz where as
IGBTs can be switched upto 25kHz and even to 100KHz with
few soft switching techniques.

The thyristor can carry very high currents order of 3000A
but IGBT carries less current max of 1000A.

Thyristor commutation ,that is switching off is very
difficult. But there are applications of thyridtor with
natural commutation.

The IGBT can be switched on and off like a MOSFET. ie it is
voltage controlled device.

Answer / parat

would the IGBT rectifier suitable for electro plating
application at max 2000A / 12 V above the SCR type.

Answer / shishant anand

IGBT are widely used in medium power application such DC and
AC motor drive. IGBT is more expensive. The IGBT Of 1200 v,
500A rating 0.25 to 20 micro second turn off time with
operation frequency upto 50Khz are available.

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