Answer Posted / priyadharsini

Insulated gate bipolar transister. it is a combination of
BJT and MOSFET.

BJT has low conduction loss and having longer switching
period.
MOSFET has high conduction loss and having lower switching
period.
therfore IGBT has low conduction loss and high switching
period.

it is used in SMPS, traction motor, Induction heating etc.

In SCR once the gate is triggered the gate is lossed its
control. ie if we remove the gate pulse after the SCR
starts conducting it will not stop.

but in IGBT we can control the Gate. by applying reverse
voltage.

i think this is the difference if any one find the above
answer is wrong please tell me the right one.

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