Answer Posted / guest

we all know that resistance arises due to the collision of
electrons with other atoms n electrons... the molecular
structure of conductor are in such a way that it offers
less resistance to the flow of electrons

Is there a possibility to use such a treshold voltage for the NMOS part of a CMOS circuit that during the switching it will start conducting only after the PMOS part will be already closed, by this eliminating the leakedge current? Please note, I'm not asking about the well bias in standby mode, but about the "antileakedge" measures during normal operation.

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