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Answer Posted / eric
This is caused because the device dimensions have been scaled down, but power supply and the operating voltages have not scaled accordingly. This causes the increase of electrical field strength and the velocity of electrons. Electrons trapped in oxide change the threshold voltage, typically increasing the threshold of NMOS, decreasing the threshold of PMOS. The hot-electron phenomenon can lead to a long-term reliability problem. To keep the hot-carrier effect under control, specailly engineered drain and source regions are used to keep the electrical fields in bound.
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