Answer / baikunth

Basically any semiconductor devices fails due to two
reasons- 1. over temperature or thermal runaway.
2. over voltage or breakdown of the bond.
3. high speed switching which causes less recovery time.
but in case of high frequency application the third one is
most important.

Answer / ganesh kamath

MOSFETS can withstand simultaneous application of high current and voltage without undergoing destructive. Power MOSFETs can also be paralleled easily because the forward voltage drop increases with increasing temperature, ensuring an even distribution of current among all components.

However, at high breakdown voltages (>200V) the on-state voltage drop of the power MOSFET becomes higher than that of a similar size bipolar device with similar voltage rating. This makes it more attractive to use the bipolar power transistor at the expense of worse high frequency performance.

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